Homoepitaxially grown SiC steps on bulk crystal, - samples as seen through as scanning probe microscope (SPM) and atomic force microscope (AFM)

Homoepitaxially grown SiC steps on bulk crystal,
5 mm scan, 3-D

This is an image of epitaxially grown single-crystal silicon carbide. Monoatomic steps 2.5 Å in height are resolved with the Q-Scope using WaveMode.

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