Alumina layer, annealed, with vias, 3-D - sample as seen through as scanning probe microscope (SPM) and atomic force microscope (AFM)

Insulated Gate Bipolar Transistor : aluminium layer with vias

The aluminium layer was annealed to 380ºC in order to coarsen the grain structure. The pattern of vias in the film provides pathways for tungsten interconnects. 30 mm scan performed in contact mode.
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